FAP Plasmatechnik FAP Forschungs- und Applikationslabor Plasmatechnik GmbH Dresden
Amorphous silicon carbide

PECVD Process Features & Application

The FAP PECVD process of amorphous silicon carbide is a deposition process typically carried out at temperatures below 250 °C and at a 13.56 - 60 MHz MHz excitation. The deposition is done in a SiH4/CH4 mixture with or without B2H6 for gas phase doping. Important process features are films of controllable hardness, moisture protection, surface energy, optical gap and conductivity.
The amorphous silicon carbide thin films realize an encapsulation of the amorphous silicon structure in photoreceptors and a p-type window layer in solar cells and image sensors.
The FAP process is designed for a deposition on flat or coaxial substrates. SF6 plasma etching is used for reactor cleaning.


• Coaxial PECVD systems TR 500, Substrate dimensions
  Ø 30 mm … Ø 140 m, length up to 500 mm, and flat substrates
  up to 40 mm x 500 mm
• Plane-parallel VHF-PECVD module VPM 200, Ø 200 mm wafer


• Photoreceptors
• Solar cells
• Digital image sensors

Protection Layer Properties & Process Capability

• Coaxial reactor
• Frequency 27.12 MHz
• Substrate powered
• Substrate temperature 180 ... 220 oC
• In situ plasma reactor cleaning using SF6 

Optical gap 2.0 ... 2.3 eV
Conductivity < 1×10-13 S/cm
Hardness > 900 HV

Window Layer Properties & Process Capability

• Plane-parallel reactor
• Frequency 40,68 MHz
• Substrate grounded
• Substrate temperature 220 oC
• Deposition rate approx. 30 nm/min
•  In situ plasma reactor clean using SF6

W04 > 2,05 eV
Conductivity > 10-5 S/cm


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FAP GmbH Dresden
Gostritzer Str. 67 B
01217 Dresden/Germany

Tel.: + 49 351 8718110
Fax: + 49 351 8718416
E-mail: info@fap-gmbh.de

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