FAP Plasmatechnik FAP Forschungs- und Applikationslabor Plasmatechnik GmbH Dresden
VHF PECVD reactor with gas sealing VPM 200


• VHF high rate PECVD a-Si:H and
  a-Si alloys on 6" or 8" wafers,
  carrier-free processing
• Digital image sensor
• Production of complex thin film


• To be integrated into a multi chamber cluster tool with centrally
  transfer vacuum robot
• Purge gas sealed reactor inside the vacuum chamber consisting of
  VHF-electrode, screen and substrate electrode
• Plasma confinement by the electrode screen
• Electrode distance adjustable to match process requirements by
  substrate electrode shift VHF-electrode with gas shower head and
  low loss power feeding system
• Substrate electrode grounded
• Face up mode processing
• Substrate heater
• Mass flow controlled gas delivery system


• RF/VHF-PECVD: a-Si:H, µc-Si, Si alloys
• Gas phase doping
• Reactor cleaning: Fluorine based etching
• Film non-uniformity < ± 3 %

Technical Data 

Substrate dimensions Ø 150 mm und 200 mm
VHF power supply 40.68, 1000 W
Substrate temperature 300 °C
Electrode distance 15 - 35 mm
Operation pressure 0.05 - 5 mbar
Turbo drag pumps 1000 l/s
Process vacuum pump - 400 m3/hr
Dimensions Ø approx. 480 mm
PECVD and etching gases SiH4, SF6, CH4, H2, Ar
Doping gases B2H6, PH


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FAP GmbH Dresden
Gostritzer Str. 67 B
01217 Dresden/Germany

Tel.: + 49 351 8718110
Fax: + 49 351 8718416
E-mail: info@fap-gmbh.de

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